Optical properties of laser-processed InxGa1−xAs
Identifieur interne : 000168 ( Main/Exploration ); précédent : 000167; suivant : 000169Optical properties of laser-processed InxGa1−xAs
Auteurs : RBID : ISTEX:339_1994_Article_BF00331922.pdfEnglish descriptors
Abstract
Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm2 shows InxGa1−xAs phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm2 shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method.
DOI: 10.1007/BF00331922
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Cho</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, Dongguk University 26, Pil-dong, 3-ga, Chung-ku, 100-715, Seoul, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics, Dongguk University 26, Pil-dong, 3-ga, Chung-ku, 100-715, Seoul</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>C. Tong</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, Dongguk University 26, Pil-dong, 3-ga, Chung-ku, 100-715, Seoul, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics, Dongguk University 26, Pil-dong, 3-ga, Chung-ku, 100-715, Seoul</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>S.-K. Min</name><affiliation wicri:level="1"><mods:affiliation>Division of Electronics and Information Technology, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, 130-650, Seroul, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Division of Electronics and Information Technology, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, 130-650, Seroul</wicri:regionArea><wicri:noRegion>Seroul</wicri:noRegion></affiliation></author><author><name>S. H. Han</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>J. W. Wu</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>I.-S. Yang</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1994_Article_BF00331922.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF00331922</idno><idno type="wicri:Area/Main/Corpus">000D25</idno><idno type="wicri:Area/Main/Curation">000D25</idno><idno type="wicri:Area/Main/Exploration">000168</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>61.70.At</term><term>68.55.Nq</term><term>78.30.Fs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm2 shows InxGa1−xAs phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm2 shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="e528529909eb5712b0d95f709a5cfb54af745bb6"><titleInfo lang="eng"><title>Optical properties of laser-processed InxGa1−xAs</title></titleInfo><name type="personal"><namePart type="given">J.-H.</namePart><namePart type="family">Park</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</affiliation></name><name type="personal"><namePart type="given">H. Y.</namePart><namePart type="family">Cho</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Dongguk University 26, Pil-dong, 3-ga, Chung-ku, 100-715, Seoul, Korea</affiliation></name><name type="personal"><namePart type="given">C.</namePart><namePart type="family">Tong</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Dongguk University 26, Pil-dong, 3-ga, Chung-ku, 100-715, Seoul, Korea</affiliation></name><name type="personal"><namePart type="given">S.-K.</namePart><namePart type="family">Min</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Division of Electronics and Information Technology, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, 130-650, Seroul, Korea</affiliation></name><name type="personal"><namePart type="given">S. H.</namePart><namePart type="family">Han</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</affiliation></name><name type="personal"><namePart type="given">J. W.</namePart><namePart type="family">Wu</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</affiliation></name><name type="personal"><namePart type="given">I.-S.</namePart><namePart type="family">Yang</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Ewha Womans University, 11-1, Daehyun-Dong, Sudaemun-Gu, 120-750, Seoul, Korea</affiliation></name><typeOfResource>text</typeOfResource><genre>Surfaces And Multilayers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1994-02-01</dateCreated><dateCaptured encoding="w3cdtf">1994-07-25</dateCaptured><dateValid encoding="w3cdtf">2004-08-28</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm2 shows InxGa1−xAs phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm2 shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method.</abstract><subject lang="eng"><genre>PACS</genre><topic>78.30.Fs</topic><topic>68.55.Nq</topic><topic>61.70.At</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1994</partNumber><partNumber>Volume: 59</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-12-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Condensed Matter and Material Sciences</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Semiconductors</topic><topic>Micro- and Nanosystems</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 19</identifier><recordInfo><recordOrigin>Springer-Verlag, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00331922</identifier><identifier type="matrixNumber">Art12</identifier><identifier type="local">BF00331922</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>617</start><end>621</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1994</recordOrigin><recordIdentifier>339_1994_Article_BF00331922.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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